PD533BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
14mΩ @VGS = -10V
ID -51A
TO-252
...
PD533BA
P-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
14mΩ @VGS = -10V
ID -51A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS -40
Gate-Source
Voltage
VGS ±25
Continuous Drain Current2 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
-51 -40 -150
Avalanche Current
IAS -38
Avalanche Energy
L = 0.1mH
EAS
72.2
Power Dissipation
TC= 25 °C TC= 100°C
PD
65 42
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is -40A.
SYMBOL RqJC RqJA
TYPICA L
MAXIMUM 1.9 62.5
UNITS °C / W
REV 1.0 1 2015/4/9
PD533BA
P-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNIT...
