MOSFET. PD548BA Datasheet

PD548BA Datasheet PDF

Part PD548BA
Description N-Channel MOSFET
Feature PD548BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.6mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PD548BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PD548BA Datasheet




PD548BA
PD548BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.6mΩ @VGS = 10V
ID
85A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
85
54
170
Avalanche Current
IAS 38
Avalanche Energy
L =0.1mH
EAS
72
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
59
23
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RqJC
Junction-to-Ambient
RqJA
1Pulse width limited by maximum junction temperature.
2Calculated continuous current based on maximum allowable junction temperature,
Package limitation current is 40A.
MAXIMUM UNITS
2.1
°C / W
62.5
REV 1.0
1 2013-11-25



PD548BA
PD548BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMIT
UNITS
MSIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 15A
VGS = 10V , ID = 20A
VDS = 5V, ID = 20A
30
V
1.5 1.75 2.35
±100 nA
1
mA
10
4.5 7.2
3.8 4.6
70 S
DYNAMIC
Input Capacitance
Ciss
2320
Output Capacitance
Reverse Transfer
Capacitance
Gate Resistance
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
346
285
0.9
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS =15V,
VGS = 10V, ID = 20A
54
7.5
17.3
Turn-On Delay Time2
td(on)
24
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
16
63
Fall Time2
tf
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / μS
23
10
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3 Calculated continuous current based on maximum allowable junction temperature,
85
1.3
pF
Ω
nC
nS
A
V
nS
nC
Package limitation current is 40A.
REV 1.0
2 2013-11-25




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