PD55035STR1-E

PD55035STR1-E Datasheet 35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor 1 3 2 PowerSO-10RF (straight lead) Pin connection Pin Connection 1 Drain 2 Source 3 Gate Features Order code Frequency VDD PD55035STR1-E 500 MHz 12.5 V Excellent thermal stability Common source configuration POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V New RF plastic package POUT 35 W Gain 16.9 dB Efficiency 62% Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Product status link PD55035STR1-E Product summary Order code PD55035STR1-E Marking PD55035S Package PowerSO-10RF (straight lead) Packing Tape and reel DS13938 - Rev 1 - March 2022 For further information contact your local STMicroelectronics sales office. www.st.com PD55035STR1-E Electrical ratings 1 Electrical da...