PDTA123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 04 — 3 September 2009
Product data sh...
PDTA123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 04 — 3 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistors (RET).
Table 1. Product overview
Type number Package
NXP
PDTA123YE
SOT416
PDTA123YK
SOT346
PDTA123YM
SOT883
PDTA123YS[1]
SOT54
PDTA123YT
SOT23
PDTA123YU
SOT323
JEITA SC-75 SC-59A SC-101 SC-43A SC-70
JEDEC TO-236 TO-92 TO-236AB -
[1] Also available in SOT54A and SOT54 variant packages (see Section 2)
NPN complement
PDTC123YE PDTC123YK PDTC123YM PDTC123YS PDTC123YT PDTC123YU
1.2 Features
I Built-in bias resistors I Simplifies circuit design
I Reduces component count I Reduces pick and place costs
1.3 Applications
I General purpose switching and amplification
I Inverter and interface circuits
I Circuit drivers
1.4 Quick reference data
Table 2. Symbol VCEO IO R1 R2/R1
Quick reference data Parameter collector-emitter
voltage output current (DC) bias resistor 1 (input) bias resistor ratio
Conditions open base
Min Typ --1.54 2.2 3.6 4.5
Max −50 −100 2.86 5.5
Unit V mA kΩ
NXP Semiconductors
PDTA123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
2. Pinning information
Table 3. Pin SOT54 1 2 3
Pinning Description
input (base) output (collector) GND (emitter)
SOT54A 1 2 3
input (base) output (collector) GND (emitter)
SOT54 variant 1 input (base) 2 output (collector) 3 GND (emitter)
SOT23, SOT323, SOT346, SOT416 1 input (base) 2 GND ...