SOT883B
PDTA143EMB
PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ
Rev. 1 — 14 May 2012
Product data shee...
SOT883B
PDTA143EMB
PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ
Rev. 1 — 14 May 2012
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTC143EMB.
1.2 Features and benefits
100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs
Simplifies circuit design AEC-Q101 qualified Leadless ultra small SMD plastic
package Low package height of 0.37 mm
1.3 Applications
Low-current peripheral driver Control of IC inputs
Replaces general-purpose transistors in digital applications
Mobile applications
1.4 Quick reference data
Table 1. Symbol VCEO
IO R1 R2/R1
Quick reference data Parameter collector-emitter
voltage output current bias resistor 1 (input) bias resistor ratio
Conditions open base
Tamb = 25 °C
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