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PDTB113ZT

NXP

50V resistor-equipped transistor

PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 3 — 23 September 2010 Product dat...


NXP

PDTB113ZT

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Description
PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 3 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD113ZT. 1.2 Features and benefits „ 500 mA output current capability „ Built-in bias resistors „ Simplifies circuit design „ Reduces component count „ Reduces pick and place costs „ ±10 % resistor ratio tolerance „ AEC-Q101 qualified 1.3 Applications „ Digital application in automotive and industrial segments „ Control of IC inputs „ Cost-saving alternative for BC807 series in digital applications „ Switching loads 1.4 Quick reference data Table 1. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Min Typ Max Unit - - −50 V - - −500 mA 0.7 1....




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