PDTB123TT

PDTB123TT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 4 — 8 November 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123TT. 1.2 Features and benefits „ 500 mA output current capability „ Built-in bias resistor „ Simplifies circuit design „ Reduces component count „ Reduces pick and place costs „ AEC-Q101 qualified 1.3 Applications „ Digital application in automotive and industrial segments „ Control of IC inputs „ Cost-saving alternative for BC807 series in digital applications „ Switching loads 1.4 Quick reference data Table 1. Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) Conditions open base Min Typ --1.54 2.2 Max −50 −500 2.86 Unit V mA kΩ NXP Semiconductors PDTB123TT PNP 500 mA resistor-equip...