PDTB123YT

PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT. 1.2 Features and benefits „ 500 mA output current capability „ Built-in bias resistors „ Simplifies circuit design „ Reduces component count „ Reduces pick and place costs „ ±10 % resistor ratio tolerance „ AEC-Q101 qualified 1.3 Applications „ Digital application in automotive and industrial segments „ Control of IC inputs „ Cost-saving alternative for BC807 series in digital applications „ Switching loads 1.4 Quick reference data Table 1. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Min Typ Max Unit - - −50 V - - −500 mA 1.54 2.2 2.86 kΩ 4.1 4.55 5 NXP Semiconductors PDTB123YT PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ 2. Pinning information Table 2. Pin 1 2 3 Pinning Description input (base) GND (emitter) output (collector) Simplified outline Graphic symbol 3 12 006aaa144 R1 1 3 R2 2 sym003 3. Ordering information Table 3. Ordering information Type number Package Name Description PDTB123YT - plastic surface-mounted package; 3 leads 4. Marking Table 4. Marking codes Type number PDTB123YT [1] * =...