PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 04 — 16 November 2009
Product data sh...
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 04 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTC123YE
SOT416
PDTC123YK
SOT346
PDTC123YM
SOT883
PDTC123YS[1]
SOT54
PDTC123YT
SOT23
PDTC123YU
SOT323
JEITA SC-75 SC-59A SC-101 SC-43A SC-70
JEDEC TO-236 TO-92 TO-236AB -
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTA123YE PDTA123YK PDTA123YM PDTA123YS PDTA123YT PDTA123YU
1.2 Features
Built-in bias resistors Simplifies circuit design
Reduces component count Reduces pick and place costs
1.3 Applications
General-purpose switching and amplification
Inverter and interface circuits
Circuit drivers
1.4 Quick reference data
Table 2. Symbol VCEO IO R1 R2/R1
Quick reference data Parameter collector-emitter
voltage output current (DC) bias resistor 1 (input) bias resistor ratio
Conditions open base
Min Typ --1.54 2.2 3.6 4.5
Max Unit 50 V 100 mA 2.86 kΩ 5.5
NXP Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
2. Pinning information
Table 3. Pin SOT54 1 2 3
Pinning Description
input (base) output (collector) GND (emitter)
SOT54A 1 2 3
input (base) output (collector) GND (emitter)
SOT54 variant 1 input (base) 2 output (collector) 3 GND (emitter)
SOT23; SOT323; SOT346; SOT416 1 input (bas...