DFN1010D-3
PDTC143/114/124/144EQA
series
50 V, 100 mA NPN resistor-equipped transistors
Rev. 1 — 30 October 2015
Pr...
DFN1010D-3
PDTC143/114/124/144EQA
series
50 V, 100 mA NPN resistor-equipped transistors
Rev. 1 — 30 October 2015
Product data sheet
1. Product profile
1.1 General description
100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Table 1. Product overview
Type number
R1
PDTC143EQA
4.7 k
PDTC114EQA
10 k
PDTC124EQA
22 k
PDTC144EQA
47 k
R2 4.7 k 10 k 22 k 47 k
Package NXP PNP complement DFN1010D-3 PDTA143EQA (SOT1215) PDTA114EQA
PDTA124EQA PDTA144EQA
1.2 Features and benefits
100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count
Reduced pick and place costs Low package height of 0.37 mm AEC-Q101 qualified Suitable for Automatic Optical
Inspection (AOI) of solder joint
1.3 Applications
Digital applications Cost saving alternative for
BC847/BC857 series in digital applications
Controlling IC inputs Switching loads
1.4 Quick reference data
Table 2. Symbol VCEO IO
Quick reference data Parameter collector-emitter
voltage output current
Conditions open base
Min Typ Max Unit - - 50 V - - 100 mA
NXP Semiconductors
PDTC143/114/124/144EQA series
50 V, 100 mA NPN resistor-equipped transistor
2. Pinning information
Table 3. Pinning Pin Symbol 1I 2 GND 3O 4O
Description input (base) GND (emitter) output (collector) output (collector)
Simplified ou...