PDTC143ZT

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC143ZT NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 47 kΩ respectively) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA143ZT. 1 Top view 2 MAM097 PDTC143ZT PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION dbook, 4 columns 3 3 R1 1 R2 2 Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTC143ZT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. 2 MGA893 - 1 MARKING CODE(1) ∗18 1 3 Fig.2 Equivalent inverter symbol. 1999 May 21 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-c...