PDTC144EU

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC144EU NPN resistor-equipped transistor Objective specification Supersedes data of 1998 May 18 1999 Apr 16 Philips Semiconductors Objective specification NPN resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 47 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in an SC-70; SOT323 plastic package. PNP complement: PDTA144EU. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output MGA893 - 1 PDTC144EU handbook, 4 columns 3 3 R1 1 R2 2 1 Top view 2 MAM134 Fig.1 Simplified outline (SC-70; SOT323) and symbol. MARKING TYPE NUMBER 1 2 3 MARKING CODE(1) ∗08 PDTC144EU Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.2 Equivalent inverter symbol. 1999 Apr 16 2 Philips Semiconductors Objective specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR...