PDTD113EK

PDTD113E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NXP PDTD113EK SOT346 PDTD113ES[1] SOT54 PDTD113ET SOT23 JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB [1] Also available in SOT54A and SOT54 variant packages (see Section 2). PNP complement PDTB113EK PDTB113ES PDTB113ET 1.2 Features „ Built-in bias resistors „ Simplifies circuit design „ 500 mA output current capability „ Reduces component count „ Reduces pick and place costs „ ±10 % resistor ratio tolerance 1.3 Applications „ Digital application in automotive and industrial segments „ Controlling IC inputs „ Cost saving alternative for BC817 series in digital applications „ Switching loads 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min Typ Max Unit - - 50 V - - 500 mA 0.7 1 1.3 kΩ 0.9 1.0 1.1 NXP Semiconductors PDTD113E series NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ 2. Pinning information Table 3. Pin SOT54 1 2 3 Pinning Description input (base) output (collector) GND (emitter) SOT54A 1 2 3 input (base) output (collector) GND (emitter) SOT54 variant 1 input (base) 2 output (collector) ...