PDTD123T series
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Rev. 03 — 16 November 2009
Pro...
PDTD123T series
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Rev. 03 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTD123TK
SOT346
PDTD123TS[1] SOT54
PDTD123TT
SOT23
JEITA SC-59A SC-43A -
JEDEC TO-236 TO-92 TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTB123TK PDTB123TS PDTB123TT
1.2 Features
Built-in bias resistors Simplifies circuit design 500 mA output current capability
Reduces component count Reduces pick and place costs
1.3 Applications
Digital application in automotive and industrial segments
Controlling IC inputs
Cost saving alternative for BC817 series in digital applications
Switching loads
1.4 Quick reference data
Table 2. Symbol VCEO IO R1
Quick reference data Parameter collector-emitter
voltage output current bias resistor 1 (input)
Conditions open base
Min 1.54
Typ 2.2
Max Unit 50 V 500 mA 2.86 kΩ
NXP Semiconductors
PDTD123T series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2. Pinning information
Table 3. Pin SOT54 1 2 3
Pinning Description
input (base) output (collector) GND (emitter)
SOT54A 1 2 3
input (base) output (collector) GND (emitter)
SOT54 variant 1 input (base) 2 output (collector) 3 GND (emitter)
SOT23, SOT346 1 input (base) 2 GND (emitter) 3 output (collect...