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PE4230

Peregrine Semiconductor

SPDT High Power UltraCMOS RF Switch

www.DataSheet4U.com Product Specification PE4230 Product Description The PE4230 UltraCMOS™ RF Switch is designed to co...


Peregrine Semiconductor

PE4230

File Download Download PE4230 Datasheet


Description
www.DataSheet4U.com Product Specification PE4230 Product Description The PE4230 UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC through 3000 MHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supply, a typical input 1 dB compression point of +32 dBm can be achieved. The PE4230 also exhibits input-output isolation of better than 39 dB at 1000 MHz and is offered in a small 8-lead MSOP package. The PE4230 SPDT High Power UltraCMOS™ RF Switch is manufactured in Peregrine’s patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram RFC SPDT High Power UltraCMOS™ RF Switch Features Single 3-volt power supply Low insertion loss: 0.35 dB at 1000 MHz, 0.55 dB at 2000 MHz High isolation of 39 dB at 1000 MHz, 30 dB at 2000 MHz Typical input 1 dB compression point of +32 dBm Single-pin CMOS or TTL logic control Low cost Figure 2. Package Type 8-lead MSOP RF1 RF2 CMOS Control Driver CTRL Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 Ω) Parameter Operation Frequency Insertion Loss Isolation – RFC to RF1/RF2 Isolation – RF1 to RF2 Return Loss ‘ON’ Switching Time ‘OFF’ Switching Time Video Feedthrough 2 1 Conditions 1000 MHz 2000 MHz 1000 MHz 2000 MHz 1000 MHz 2000 MHz 1000 MHz 20...




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