PE42512

PE42512 Document Category: Product Specification UltraCMOS® SP12T RF Switch, 9 kHz–8 GHz Features High isolation: 39 dB @ 6 GHz Low insertion loss: 1.3 dB @ 6 GHz Fast switching time of 232 ns Power handling of 33 dBm CW Logic select (LS) pin provides maximum control logic flexibility Terminated all-off state mode External VSS pin to eliminate spur Packaging – 32-lead 5 × 5 × 0.85 mm QFN Applications Test and measurement Wireless applications up to 8 GHz Filter bank switching RF signal routing Figure 1 PE42512 Functional Diagram RFC RF1 RF12 RF2 RF11 RF3 RF10 RF4 RF9 RF5 RF8 RF6 RF7 CMOS Control Driver and ESD V1 V2 V3 V4 VSS_EXT switch configuration 50Ω Product Description The PE42512 is a HaRP™ technology-enhanced absorptive SP12T RF switch that supports a frequency range from 9 kHz to 8 GHz. An external VSS pin is available for bypassing the internal negative voltage generator in order for the PE42512 to deliver spur-free performance. It delivers high isolation, low insertion loss, and fast switching time, making this device ideal for filter bank switching and RF signal routing in test and measurement (T&M) and wireless applications up to 8 GHz. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42512 is manufactured on pSemi’s UltraCMOS® process, a patented advanced form of silicon-oninsulator (SOI) technology. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonic...