PE506BA

PE506BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 38A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current Tc = 25 °C Tc = 100 °C TA = 25 °C TA= 70 °C ID IDM IAS 38 24 12 9.8 60 32 Avalanche Energy L =0.1mH EAS 53 TC = 25 °C Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, Tstg 15.6 6.3 1.6 1 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 77 Junction-to-Case RqJC 8 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 19A. UNITS °C / W REV 1....