PE551BA

PE551BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -22A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±25 TC = 25 °C -22 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current Avalanche Energy TC = 100 °C TA = 25 °C TA = 70 °C L = 0.1mH ID IDM IAS EAS -14 -7 -5.8 -40 -23 26 TC = 25 °C 17 Power Dissipation Junction & Storage Temperature Range TC = 100 °C TA = 25 °C TA = 70 °C PD TJ, TSTG 7 1.9 1.2 -55 to 150 UNITS V A mJ W °C REV1.0 1 2016/6/22 PE551BA P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 65 Junction-to-Case RqJC 7.2 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1 in2 FR-4 board wi...