PE5E6BA

PE5E6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 39A PDFN 3X3P 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current4 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 39 25 100 Continuous Drain Current4 TA = 25 °C TA = 70 °C ID 16 13 Avalanche Current IAS 33 Avalanche Energy L =0.1mH EAS 54 Power Dissipation Power Dissipation3 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C PD 17.8 7 3 2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t ≦10s RqJA 40 Junction-to-Ambient2 Steady-State RqJA 60 Junction-to-Case Steady-State RqJC 7 1Pulse width limited by maximum junction temperature. 2The value ...