MOSFET. PE600BA Datasheet

PE600BA Datasheet PDF

Part PE600BA
Description MOSFET
Feature PE600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PE600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PE600BA Datasheet




PE600BA
PE600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.8mΩ @VGS = 10V
ID
32A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
32
20
14
11
90
Avalanche Current
IAS 18.5
Avalanche Energy
L =0.1mH
EAS
17
Power Dissipation
Power Dissipation4
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
PD
17.8
7
3.5
2.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
35
75
Junction-to-Case
Steady-State
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 16A.
4The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.1
1 2015/7/20



PE600BA
PE600BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ =55 °C
VGS = 4.5V, ID = 9A
VGS = 10V , ID =9A
VDS = 10V, ID = 9A
30
V
1.3 1.75 2.3
±100 nA
1
mA
10
10.2 14
7.8 9.8
35 S
DYNAMIC
Input Capacitance
Ciss
620
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz 108 pF
Reverse Transfer Capacitance
Crss
77
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 2.5 Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 15V , ID = 9A
14
8 nC
2
Gate-Drain Charge2
Qgd
3.8
Turn-On Delay Time2
td(on)
13
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD= 15V,
ID @ 9A, VGEN = 10V, RG= 6Ω
37
nS
48
Fall Time2
tf
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
16 A
Forward Voltage1
VSD IF = 9A, VGS = 0V
1.1 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 9A, dlF/dt = 100A / mS
12 nS
3 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 16A.
REV 1.1
2 2015/7/20




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