PE600BA

PE600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 32A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C ID IDM 32 20 14 11 90 Avalanche Current IAS 18.5 Avalanche Energy L =0.1mH EAS 17 Power Dissipation Power Dissipation4 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C PD 17.8 7 3.5 2.3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 35 75 Junction-to-Case Steady-State RqJC 7 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device...