PE618BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID 40A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
40 25 100
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
12 10
Avalanche Current
IAS 30
Avalanche Energy
L =0.1mH
EAS
46
.
MOSFET
PE618BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID 40A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
40 25 100
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
12 10
Avalanche Current
IAS 30
Avalanche Energy
L =0.1mH
EAS
46
TC = 25 °C
17.8
Power Dissipation
TC = 100 °C TA = 25 °C
PD
7 1.6
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
77
Junction-to-Case
RqJC
7
1Pulse width limited by maximum junction temperature.
2Package limitation current is 22A 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,.