PESD5V0S1BA

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET PESD5V0S1BA Low capacitance bi-directional ESD protection diode in SOD323 Product specification 2004 Mar 22 www.DataSheet4U.com Philips Semiconductors Product specification Low capacitance bi-directional ESD protection diode in SOD323 FEATURES Bi-directional ESD protection of one line Low diode capacitance Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A Ultra low leakage current: IRM = 5 nA at VRWM = 5 V ESD protection 30 kV IEC 61000-4-2; level 4 (ESD) IEC-61000-4-5 (surge); Ipp = 12 A at tP = 8/20 µs. APPLICATIONS Cellular handsets and accessories Portable electronics Computers and peripherals Communication systems Audio and video equipment. DESCRIPTION Top view 1 2 PESD5V0S1BA QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse standoff voltage diode capacitance; f = 1 MHz; VR = 0 V VALUE 5 35 UNIT V pF number of protected lines 1 PINNING PIN 1 2 anode 1 anode 2 DESCRIPTION 1 2 001aaa138 Low capacitance ESD protection diode in a very small SOD323 plastic package, designed to protect one data line from ElectroStatic Discharge (ESD) damage. The marking bar indicates pin 1 (cathodes are connected internally). MARKING TYPE NUMBER PESD5V0S1BA ORDERING INFORMATION MARKING CODE E6 Fig.1 Simplified outline (SOD323) and symbol. PACKAGE TYPE NUMBER NAME PESD5V0S1BA − DESCRIPTION plastic surface mounted package; 2 leads VERSION SOD323 ...