PESD5V0U2BMB
Ultra low capacitance bidirectional double ESD protection
array
5 December 2018
Product data sheet
1. ...
PESD5V0U2BMB
Ultra low capacitance bidirectional double ESD protection
array
5 December 2018
Product data sheet
1. General description
Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection array designed to protect up to two signal lines from the damage caused by ESD and other transients. The device is housed in a leadless ultra small SOT883B (DFN1006B-3) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
ESD protection of up to two lines Ultra low diode capacitance: Cd = 2.9 pF Ultra low leakage current: IRM = 5 nA AEC-Q101 qualified ESD protection up to 10 kV IEC 61000-4-2; level 4 (ESD)
3. Applications
Computers and peripherals Audio and video equipment Cellular handsets and accessories Communication systems Portable electronics SIM card protection High-speed data lines
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VRWM
reverse standoff
voltage
Cd diode capacitance
Conditions Tamb = 25 °C
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Min Typ Max Unit - - 5V
- 2.9 3.5 pF
Nexperia
PESD5V0U2BMB
Ultra low capacitance bidirectional double ESD protection array
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) 3 CC common cathode
Simplified outline
1 3
2
Transparent top view
DFN1006B-3 (SOT883B)
Graphic symbol
K1 CC
K2
006aab331
6. Ordering information
Table 3. Ordering information
Type number
Pack...