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PESD5V0V2BM

NXP

Very low capacitance bidirectional ESD protection diodes

SOT883 PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes 14 August 2015 Product data sheet 1. Ge...


NXP

PESD5V0V2BM

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Description
SOT883 PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes 14 August 2015 Product data sheet 1. General description Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect two signal lines from damage caused by ESD and other transients. The device is housed in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Bidirectional ESD protection of two lines Ultra small SMD plastic package ESD protection up to 30 kV; IEC 61000-4-2 IPPM = 9 A; IEC 61000-4-5 (surge) Ultra low leakage current: IRM = 1 nA AEC-Q101 qualified 3. Applications Computers and peripherals Audio and video equipment Cellular handsets and accessories Communication systems Portable electronics 4. Quick reference data Table 1. Symbol VRWM Cd Quick reference data Parameter reverse standoff voltage diode capacitance Conditions Tamb = 25 °C f = 1 MHz; VR = 0 V; Tamb = 25 °C Min Typ Max Unit - - 5V - 18 20 pF Scan or click this QR code to view the latest information for this product NXP Semiconductors PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode 2 K2 cathode 3 K3 common cathode Simplified outline 1 3 2 Transparent top view DFN1006-3 (SOT883) Graphic symbol 1 3 2 006aab331 6. Ordering information Table 3. Ordering information Type number Package Name PESD5V0...




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