www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03DBVSC
TVS Diode for ESD Protection in Portable Electronics
FEATURES
50 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Va.
TVS Diode
www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03DBVSC
TVS Diode for ESD Protection in Portable Electronics
FEATURES
50 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line.
2
CATHODE MARK
1
D
C
B A
DIM A B C D E F
E
MILLIMETERS 1.4Ź0.05 1.0Ź0.05 0.6Ź0.05 0.28Ź0.03 0.5Ź0.05 0.12Ź0.03
Low clamping voltage. Low leakage current.
1. ANODE 2. ANODE
F
APPLICATIONS
Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals.
VSC
Marking
2
SYMBOL Tj Tstg RATING -55 150 -55 150
2 1
MAXIMUM RATING (Ta=25
CHARACTERISTIC Junction Temperature Storage Temperature
)
UNIT
3B
1
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Stand-Off Voltage Zener Voltage Reverse Leakage Current Junction Capacitance
)
TEST CONDITION It=1mA VRWM=3.3V VR=0V, f=1MHz MIN. 4.2 TYP. MAX. 3.3 6.2 20 25 UNIT V V A pF
SYMBOL VRWM VZ IR CJ
2005. 6. 1
Revision No : 0
1/1
.