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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG05DBVSC
TVS Diode ...
www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG05DBVSC
TVS Diode for ESD Protection in Portable Electronics
FEATURES
50 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line.
2
CATHODE MARK
1
D
C
B A
DIM A B C D E F
E
MILLIMETERS 1.4Ź0.05 1.0Ź0.05 0.6Ź0.05 0.28Ź0.03 0.5Ź0.05 0.12Ź0.03
Low clamping
voltage. Low leakage current.
1. ANODE 2. ANODE
F
APPLICATIONS
Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals.
VSC
Marking
MAXIMUM RATING (Ta=25
CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Junction Temperature Storage Temperature
)
SYMBOL PPK Tj Tstg RATING 50 -55 150 -55 150
2 1
UNIT
2
5B
1
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Stand-Off
Voltage Reverse Breakdown
Voltage Reverse Leakage Current Junction Capacitance
)
TEST CONDITION It=1mA VRWM=5V VR=0V, f=1MHz MIN. 5.8 TYP. MAX. 5 7.8 5 60 UNIT V V A pF
SYMBOL VRWM VBR IR CJ
2005. 6. 8
Revision No : 1
1/1
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PG05DBVSC
NON-REPETITIVE PEAK PULSE POWER...