PHB110NQ08T

PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for standard level gate drive sources 1.3 Applications „ DC-to-DC convertors „ General industrial applications „ Motors, lamps and solenoids „ Uninterruptible power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 Min Typ Max 75 75 230 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 10 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 11 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9 and 10 48.2 nC Static characteristics RDSon drain-source on-state resistance 7.7 9 mΩ NXP Semiconductors PHB110NQ08T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain 2 1 3 [1] Simplified outline mb Graphic symbol D G mbb076 S SOT404 (D2PAK) [1] It is not possible to make a c...