PHB20N06T

PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D 2-PAK). 2. Features s Very low on-state resistance s Fast switching. 3. Applications s Switched mode power supplies s DC to DC converters. c 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) [1] mb d g s 2 MBK106 MBB076 1 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] 1. It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics. SOT404 (D2-PAK) Philips Semiconductors PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 Tmb = 25 °C VGS = 10 V; ID = 10 A Tj = 25 °C Tj = 175 °C 64 − 75 150 oC Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Typ − − − − Max 55 20.3 62 175 Unit V A W °C Tmb = 25 °C; VGS = 10 V mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-sou...