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PHB45NQ10T Datasheet

Part Number PHB45NQ10T
Manufacturers NXP
Logo NXP
Description N-channel TrenchMOS transistor
Datasheet PHB45NQ10T DatasheetPHB45NQ10T Datasheet (PDF)

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 47 A g RDS(ON) ≤ 25 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP4.

  PHB45NQ10T   PHB45NQ10T






Part Number PHB45NQ10T
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PHB45NQ10T DatasheetPHB45NQ10T Datasheet (PDF)

PHB45NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 8 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Higher operating power due to low thermal resistance  Low conduction losses due to low on-st.

  PHB45NQ10T   PHB45NQ10T







N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 47 A g RDS(ON) ≤ 25 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB45NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab DESCRIPTION SOT78 (TO220AB) tab SOT404 (D2PAK) tab SOT429 (TO247) gate drain1 source 2 drain 1 23 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 ± 20 47 33 188 150 175 UNIT V V V A A A W ˚C 1 It is not possible to make connection to pin 2 of the SOT404 package. August 1999 1 Rev 1.000 Philips Semiconduc.


2005-03-22 : 12CWQ10FN    12H3020-2    12H3040-2    12TQ045S    MI31T    MI31TA    MI32T    MI32T-L    MI32TA    MI33T   


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