PHB45NQ15T

PHB45NQ15T N-channel TrenchMOS standard level FET Rev. 02 — 2 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Simple gate drive required due to low gate charge „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ AC-to-DC secondary side rectification „ DC-to-DC converters 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 3; see Figure 1 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 75 V; Tj = 25 °C; see Figure 11 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 9; see Figure 10 Min Typ Max Unit - - 150 V - - 45.1 A - 10.3 - nC - 34 42 mΩ Nexperia PHB45NQ15T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base; connected to drain 3. Ordering information Simplified outline mb ...