| Part Number | PHP2N40E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | PowerMOS transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage... |
| Features |
pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. -55 MAX. 400 400 30 2.5 1.6 10 2.5 10 ... |
| Datasheet | PHP2N40E pdf datasheet |
| Part Number | PHP2N40 |
| Manufacturer | NXP |
| Title | PowerMOS transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state charac. |
| Features |
-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V VDD ≤ 50 V; starting Tj = 25˚C;. |
| Datasheet | PHP2N40 pdf datasheet |
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