PHPT60603PY
60 V, 3 A PNP high power bipolar transistor
13 January 2014
Product data sheet
1. General description
PNP ...
PHPT60603PY
60 V, 3 A PNP high power bipolar transistor
13 January 2014
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT60603NY.
2. Features and benefits
High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified
3. Applications
Power management Load switch Linear mode
voltage regulator Backlighting applications
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; pulsed
collector-emitter saturation resistance
IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Ty...
