PHPT60606NY

PHPT60606NY 60 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. 3. Applications Power management Load switch Linear mode voltage regulator Backlighting applications Relay replacement Motor drive 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp ≤ 1 ms collector-emitter saturation resistance IC = 6 A; IB = 600 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - 60 V - - 6A - - 14 A - 34 45 mΩ Nexperia PHPT60606NY 60 V, 6 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline mb 1234 LFPAK56; PowerSO8 (SOT669) Graphic symbol C B E sym123 6. Ordering information Table 3. Ordering information Type number Package Name PHPT60606NY LFPAK56; Power-SO8 Description Plastic single-ended surface-m...