PHPT610035PK

LFP AK 56 PHPT610035PK 24 October 2014 D PNP/PNP matched high power double bipolar transistor Product data sheet 1. General description PNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030PK. NPN/NPN complement: PHPT610035NK. 2. Features and benefits Current gain matching 10 % High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Current mirror Motor control Power management Backlighting applications Relay replacement Differential amplifiers 4. Quick reference data Table 1. Symbol Per transistor VCEO IC Per transistor RCEsat collector-emitter saturation resistance IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 110 180 mΩ collector-emitter voltage collector current open base -100 -3 V A Quick reference data Parameter Conditions Min Typ Max Unit Scan or click this QR code to view the latest information for this product NXP Semiconductors PHPT610035PK PNP/PNP matched high power double bipolar transistor 5. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description E1 B1 E2 B2 C2 C2 C1 C1 emitter TR1 base TR1 emitter TR2 base TR2 collector TR2 collector TR2 collector TR1 collector T...