PHPT61006PY

PHPT61006PY 100 V, 6 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. 3. Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current tp ≤ 1 ms; single pulse collector-emitter saturation resistance IC = -6 A; IB = -600 mA; tp ≤ 300 µs; δ ≤ 0....