| Part Number | PHX1N60E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | PowerMOS transistor Isolated version of PHP1N60E |
| Description | N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable block... |
| Features |
voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C ... |
| Datasheet | PHX1N60E pdf datasheet |
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