PPJA3433
30V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-30 V Current
-1.1A
SOT-23
Features
RDS(...
PPJA3433
30V P-Channel Enhancement Mode
MOSFET – ESD Protected
Voltage
-30 V Current
-1.1A
SOT-23
Features
RDS(ON) ,
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[email protected]<370mΩ RDS(ON) ,
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[email protected]<540mΩ RDS(ON) ,
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[email protected]<970mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0003 ounces, 0.0084 grams Marking : A33
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT -30 +8 -1.1 -4.4 1.25 10
-55~150
100
UNITS V V A A W
mW/ oC oC
oC/W
January 22,2015-REV.01
Page 1
PPJA3433
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown
Voltage Gate Threshold
Voltage
Drain-Source On-State Resistance
Zero Gate
Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Revers...