PPJA3461
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-1.9A
Features
RDS(ON) , VGS@-10V, [email protected]<...
PPJA3461
60V P-Channel Enhancement Mode
MOSFET
Voltage
-60 V Current
-1.9A
Features
RDS(ON) , VGS@-10V,
[email protected]<190mΩ RDS(ON) ,
[email protected],
[email protected]<240mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A61
SOT-23
Unit : inch(mm
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current
TA=25oC TA=70oC
Pulsed Drain Current (Note 1) Power Dissipation
TA=25oC TA=70oC
Single Pulse Avalanche Energy (Note 5)
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 6)
SYMBOL VDS VGS ID IDM PD EAS
TJ,TSTG
RθJA
LIMIT -60 +20 -1.9 -1.5 -7.6 1.25 0.8 32
-55~150
100
UNITS V V A A W mJ oC
oC/W
August 3,2015-REV.00
Page 1
PPJA3461
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown
Voltage Gate Threshold
Voltage
Drain-Source On-State Resistance
Zero Gate
Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-...