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PJA3461

Pan Jit International

P-Channel Enhancement Mode MOSFET

PPJA3461 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -1.9A Features  RDS(ON) , VGS@-10V, [email protected]<...


Pan Jit International

PJA3461

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PPJA3461 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -1.9A Features  RDS(ON) , VGS@-10V, [email protected]<190mΩ  RDS(ON) , [email protected], [email protected]<240mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0003 ounces, 0.0084 grams  Marking: A61 SOT-23 Unit : inch(mm Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25oC TA=70oC Pulsed Drain Current (Note 1) Power Dissipation TA=25oC TA=70oC Single Pulse Avalanche Energy (Note 5) Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 6) SYMBOL VDS VGS ID IDM PD EAS TJ,TSTG RθJA LIMIT -60 +20 -1.9 -1.5 -7.6 1.25 0.8 32 -55~150 100 UNITS V V A A W mJ oC oC/W August 3,2015-REV.00 Page 1 PPJA3461 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-...




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