PPJS6401
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-4.6A
Features
RDS(ON) , VGS@-10V, [email protected]...
PPJS6401
30V P-Channel Enhancement Mode
MOSFET
Voltage
-30 V Current
-4.6A
Features
RDS(ON) , VGS@-10V,
[email protected]<71mΩ RDS(ON) ,
[email protected],
[email protected]<81mΩ RDS(ON) ,
[email protected],
[email protected]<110mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams Marking: S01
SOT-23 6L-1
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT -30 +12 -4.6 -18.4 2 16
-55~150
62.5
UNITS V V A A W
mW/ oC oC
oC/W
December 31,2014-REV.03
Page 1
PPJS6401
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown
Voltage Gate Threshold
Voltage
Drain-Source On-State Resistance
Zero Gate
Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time ...