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PJS6602 Datasheet

Part Number PJS6602
Manufacturers Pan Jit International
Logo Pan Jit International
Description Complementary Enhancement Mode MOSFET
Datasheet PJS6602 DatasheetPJS6602 Datasheet (PDF)

PPJS6602 20V Complementary Enhancement Mode MOSFET Voltage 20 / -20V Current 5.2 /-3.4A SOT-23 6L Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.014 grams  Marking: SC2 Unit: inch(mm.

  PJS6602   PJS6602






Part Number PJS6603
Manufacturers Pan Jit International
Logo Pan Jit International
Description Complementary Enhancement Mode MOSFET
Datasheet PJS6602 DatasheetPJS6603 Datasheet (PDF)

PPJS6603 30V Complementary Enhancement Mode MOSFET Voltage 30 / -30V Current 4.4 /-2.9A SOT-23 6L Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.014 grams  Marking: SC3 Unit: inch(mm.

  PJS6602   PJS6602







Part Number PJS6601
Manufacturers Pan Jit International
Logo Pan Jit International
Description Complementary Enhancement Mode MOSFET
Datasheet PJS6602 DatasheetPJS6601 Datasheet (PDF)

PPJS6601 20V Complementary Enhancement Mode MOSFET Voltage 20 / -20V Current 4.1 /-3.1A SOT-23 6L Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.014 grams  Marking: SC1 Unit: inch(mm.

  PJS6602   PJS6602







Part Number PJS6600
Manufacturers Pan Jit International
Logo Pan Jit International
Description Complementary Enhancement Mode MOSFET
Datasheet PJS6602 DatasheetPJS6600 Datasheet (PDF)

PPJS6600 30V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 30 / -30V Current 1.6 /-1.1A SOT-23 6L Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.

  PJS6602   PJS6602







Complementary Enhancement Mode MOSFET

PPJS6602 20V Complementary Enhancement Mode MOSFET Voltage 20 / -20V Current 5.2 /-3.4A SOT-23 6L Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.014 grams  Marking: SC2 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal Resistance - Junction to Ambient (Note 3) SYMBOL N-Ch LIMIT P-Ch LIMIT VDS 20 -20 VGS +12 +12 ID 5.2 -3.4 IDM 20.8 -13.6 1.25 PD 10 TJ,TSTG -55~150 RθJA 100 UNITS V V A A W mW/ oC oC oC/W September 18,2015-REV.00 Page 1 PPJS6602 N-Channel Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-O.


2016-03-06 : PESD3V3S1UL    PESD5V0S1UL    PESD12VS1UL    PESD15VS1UL    PESD24VS1UL    PJ2301    PJA138L    PJA3400    PJA3401    PJA3402   


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