PJSD05LCTS

PJSD03LCTS~PJSD05LCTS SINGLE LINE LOW CAPACITIANCE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES 120 Watts peak pules power( tp=8/20µs) Small package for use in portable electronics Suitable replacement for MLV’S in ESD protection applications Low clamping voltage and leakage current In compliance with EU RoHS 2002/95/EC directives 3~5 Volts POWER 120 Watts APPLICATIONS Case: SOD-523 plastic Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.0014 grams Marking : PJSD03LCTS : PL PJSD05LCTS : PM 1 2 Fig.139 MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power (tp=8/20 µs) ESD Voltage Operating Temperature Storage Temperature Symbol Value 120 25 -55 to 150 -55 to 150 Units W KV O P PK V ESD TJ TSTG C C O ELECTRICAL CHARA CTERISTICS PJSD03LCTS Parameter Reverse Stand-Off Voltage www.DataSheet4U.com Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Symbol VRWM V BR IR VC CJ Conditions I BR=1mA VR=3.3V I PP=5A 0Vdc Bias=f=1MHz Min. 4 Typical 4.9 9.5 0.5 Max. 3.3 100 11 3 Units V V µA V pF REV.0.3-DEC.23.2009 PAGE . 1 PJSD03LCTS~PJSD05LCTS PJSD05LCTS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Symbol VRWM V BR IR VC CJ Conditions I BR=1mA VR=5V I PP=5A 0Vdc Bias=f=1MHz Min. 6.0 Typical 6.7 11 0.5 Max. 5 20 13 3 Uni...