PK527BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
14mΩ @VGS = -10V
ID -31A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
TC = 25 °C
-31
Continuous Drain Current
TC = 100 °C TA = 25 °C
ID
-20 -10
Pulsed Drain Current1
TA = 70 °C
IDM
-7.8 -90
Avalanche Current
IAS -30
Avalanche Energy
L =0.1mH
EAS
45
TC .
MOSFET
PK527BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
14mΩ @VGS = -10V
ID -31A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
TC = 25 °C
-31
Continuous Drain Current
TC = 100 °C TA = 25 °C
ID
-20 -10
Pulsed Drain Current1
TA = 70 °C
IDM
-7.8 -90
Avalanche Current
IAS -30
Avalanche Energy
L =0.1mH
EAS
45
TC = 25 °C
25
Power Dissipation
TC = 100 °C TA = 25 °C
PD
10 2.4
TA = 70 °C
1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
52
Junction-to-Case
RqJC
5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with .