PK5G6EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 2.4mΩ @VGS = 10V
ID 87A
100% UIS Te...
PK5G6EA
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 2.4mΩ @VGS = 10V
ID 87A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 20
Gate-Source
Voltage
VGS ±12
Continuous Drain Current4 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
87 55 120
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
31 25
Avalanche Current
IAS 51
Avalanche Energy
L = 0.1mH
EAS
130
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 12.5
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
4 2.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2 Junction-to-Ambient2
t ≦10s Steady-State
RqJA RqJA
30 51
Junction-to-Case
Steady-State
RqJC
4
1Pulse width limited by maximum junction temperature...