PK608BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 3.5mΩ @VGS = 10V
ID 87A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
87 55 150
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
20 15.6
Avalanche Current
IAS 49
Avalanche Energy
L =0.1mH
EAS
1.
MOSFET
PK608BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 3.5mΩ @VGS = 10V
ID 87A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
87 55 150
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
20 15.6
Avalanche Current
IAS 49
Avalanche Energy
L =0.1mH
EAS
120
Power Dissipation
TC = 25 °C TC = 100 °C
PD
50 20
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.4 1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
50.2
Junction-to-Case
RqJC
2.5
1Pulse width limited by maximum junction temperature. 2Package limitation current is 51A. 3The value of RθJA is measured with the device mounted o.