PKC26BB

PKC26BB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 1.6mΩ @VGS = 10V ID4 151A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current4 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 151 95 200 Continuous Drain Current TA = 25 °C TA= 70 °C ID 36 28 Avalanche Current IAS 57 Avalanche Energy L =0.1mH EAS 162 Power Dissipation TC = 25 °C TC = 100 °C PD 73 29 Power Dissipation3 TA = 25 °C TA = 70 °C PD 4.1 2.6 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 30 50 Junction-to-Case Steady-State RqJC 1.7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is meas...