PMBT2222AMB
40 V, 600 mA NPN switching transistor
21 September 2018
Product data sheet
1. General description
NPN swit...
PMBT2222AMB
40 V, 600 mA NPN switching transistor
21 September 2018
Product data sheet
1. General description
NPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package.
PNP complement: PMBT2907AMB
2. Features and benefits
High current (max. 600 mA) Low
voltage (max. 40V) Leadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipation comparable to SOT23
3. Applications
Switching and linear applications Mobile applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
hFE DC current gain
Conditions open base
single pulse; tp ≤ 1 ms VCE = 10 V; IC = 150 mA VCE = 10 V; IC = 500 mA
[1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
Min Typ Max Unit - - 40 V
--[1] 100 [1] 40 -
600 mA 800 mA 300 -
Nexperia
PMBT2222AMB
40 V, 600 mA NPN switching transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector
Simplified outline
1 3
2
Transparent top view
DFN1006B-3 (SOT883B)
Graphic symbol
C
B
E sym021
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMBT2222AMB
DFN1006B-3
Description
Version
plastic, leadless ultra small plastic package; 3 solder lands; 0.35 SOT883B mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body
7. Marking
Table 4. Marking codes Type number PMBT2222AMB
PIN 1 INDI...