PMC85XP

DFN2020-6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Trench MOSFET technology NPN transistor built-in bias resistors Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 3. Applications Charging switch for portable devices High-side load switch USB port overvoltage protection Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit P-channel Trench MOSFET VDS drain-source voltage Tj = 25 °C - - -30 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.4 A P-channel Trench MOSFET; static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C resistance - 85 110 mΩ NPN RET VCEO collector-emitter voltage Tamb = 25 °C; open base - - 50 V IO output current - - 100 mA Scan or click this QR code to view the latest information for this product NXP Semiconductors PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor Symbol NPN RET R1 R2 Par...