PMCM4401UNE
20 V, N-channel Trench MOSFET
29 May 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Ultra small package: 0.78 x 0.78 x 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Battery switch • High-speed line driver • Low-side loadswitch • Swi.
N-channel Trench MOSFET
PMCM4401UNE
20 V, N-channel Trench MOSFET
29 May 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Ultra small package: 0.78 x 0.78 x 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Battery switch • High-speed line driver • Low-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
Min Typ Max Unit - - 20 V -8 - 8 V [1] - - 5.4 A
- 43 52 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2
.