PMCM950ENE
60 V, N-channel Trench MOSFET
13 May 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Ultra small package: 1.48 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• High-speed line driver • Low-side load switch • Switching circuits
.
N-channel MOSFET
PMCM950ENE
60 V, N-channel Trench MOSFET
13 May 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Ultra small package: 1.48 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 3 A; Tj = 25 °C
Min Typ Max
- - 60
-20 -
20
[1] - - 6.1
- 28 41
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Unit V V A
mΩ
Nexperia
PMCM950ENE
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
A1 G
gate
A2 S
source
A3 S
source
B1 S
source
B2 S
source
B3 S
source
C1 D
drain
C2 D
drain
C3 D
drain
Simplified outline
12 3 A
B
Graphic symbol
D
G
C
Transparent top view
WLCSP9 (WLCSP9_3x3)
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMCM950ENE
WLCSP9
Description WLCSP9: wafer level chip-size pa.