PMCXB900UE

DF N1 0 PMCXB900UE 7 October 2013 10B -6 20 V, complementary N/P-channel Trench MOSFET Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4. Quick reference data Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance drain-source on-state resistance drain-source voltage drain current Conditions VGS = 4.5 V; ID = 600 mA; Tj = 25 °C Min Typ 470 Max 620 Unit mΩ TR1 (N-channel), Static characteristics TR2 (P-channel), Static characteristics RDSon VGS = -4.5 V; ID = -500 mA; Tj = 25 °C 1.02 1.4 Ω TR1 (N-channel) VDS ID VDS ID Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C [1] [1] - - 20 600 V mA TR2 (P-channel) drain-source voltage drain current -20 -500 V mA Scan or click this QR code to view the latest information for this product Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 2...